SI4410DY SOIC-8 10A 30V 2.5W 0.0135OHM N-CHANNEL MOSFET
SI4410DY MOSFET
Type Designator: SI4410DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1(min) V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 7.7 nS
Drain-Source Capacitance (Cd): 739 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0135 Ohm
Package: SO8
Ürün Bilgisi
SI4410DY MOSFET
Type Designator: SI4410DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1(min) V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 7.7 nS
Drain-Source Capacitance (Cd): 739 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0135 Ohm
Package: SO8