SI4435DY SOIC-8 8A 30V 2.5W 0.020Ω P-CHANNEL MOSFET
SI4435DY MOSFET
Type Designator: SI4435DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: SO8
Ürün Bilgisi
SI4435DY MOSFET
Type Designator: SI4435DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: SO8