SI4842BDY SOIC-8 20A 30V 3W 0.0042OHM N-CHANNEL MOSFET
SI4842BDY MOSFET
Type Designator: SI4842BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 635 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: SO-8
Ürün Bilgisi
SI4842BDY MOSFET
Type Designator: SI4842BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 635 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: SO-8