TPC8107 SOIC-8 13A 30V 1.9W 0.007OHM P-CHANNEL MOSFET
TPC8107 MOSFET
Type Designator: TPC8107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.9 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 1050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: SOP8
Ürün Bilgisi
TPC8107 MOSFET
Type Designator: TPC8107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.9 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 1050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: SOP8