SPB04N60C3 TO-263 4.5A 600V 50W 0.95Ω N-CHANNEL MOSFET
SPB04N60C3 MOSFET
Type Designator: SPB04N60C3
Marking Code: 04N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 2.5 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: TO263
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SPB04N60C3 MOSFET
Type Designator: SPB04N60C3
Marking Code: 04N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 2.5 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: TO263