SPB17N80C3 - (17N80C3) TO-263 17A 800V 227W 0.29Ω N-CHANNEL MOSFET
SPB17N80C3 MOSFET
Type Designator: SPB17N80C3
Marking Code: 17N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 227 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 88 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 94 pF
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO263
Ürün Bilgisi
SPB17N80C3 MOSFET
Type Designator: SPB17N80C3
Marking Code: 17N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 227 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 88 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 94 pF
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO263