SPD06N60C3 TO-252 6.2A 650V 74W 0.75Ω N-CHANNEL MOSFET
SPD06N60C3 MOSFET-
Type Designator: SPD06N60C3
Marking Code: 06N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 74 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO252
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SPD06N60C3 MOSFET-
Type Designator: SPD06N60C3
Marking Code: 06N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 74 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO252