SPP11N60C3 TO-220 11A 600V 125W 0.38OHM N-CHANNEL MOSFET
SPP11N60C3 MOSFET
Type Designator: SPP11N60C3
Marking Code: 11N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 390 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO220
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SPP11N60C3 MOSFET
Type Designator: SPP11N60C3
Marking Code: 11N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 390 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO220