SPP20N60S5 TO-220 20A 600V 208W 0.19Ω N-CHANNEL MOSFET
SPP20N60S5 MOSFET
Type Designator: SPP20N60S5
Marking Code: 20N60S5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 79 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 1170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO220
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SPP20N60S5 MOSFET
Type Designator: SPP20N60S5
Marking Code: 20N60S5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 79 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 1170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO220