SPW11N80C3 TO-247 11A 800V 156W 0.45Ω N-CHANNEL MOSFET
SPW11N80C3 MOSFET
Type Designator: SPW11N80C3
Marking Code: 11N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 64 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TO247
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SPW11N80C3 MOSFET
Type Designator: SPW11N80C3
Marking Code: 11N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 64 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TO247