SPW20N60C3 TO-247 20.7A 650V 0.19Ω N-CHANNEL MOSFET
SPW20N60C3 MOSFET
Type Designator: SPW20N60C3
Marking Code: 20N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 20.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 87 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 780 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO247
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SPW20N60C3 MOSFET
Type Designator: SPW20N60C3
Marking Code: 20N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 20.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 87 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 780 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO247