SPW21N50C3 TO-247 21A 500V 208W 0.19Ohm N-CHANNEL MOSFET
SPW21N50C3 MOSFET
Type Designator: SPW21N50C3
Marking Code: 21N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO247
Ürün Bilgisi
SPW21N50C3 MOSFET
Type Designator: SPW21N50C3
Marking Code: 21N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO247