SSH6N80 TO3-P 6A 800V N-CHANNEL MOSFET
SSH6N80
Type Designator: SSH6N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 200 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
Package: TO-3P
Ürün Bilgisi
SSH6N80
Type Designator: SSH6N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 200 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
Package: TO-3P