SSP3N80A TO-220 3A 800V 100W 4.8Ω N-CHANNEL MOSFET
SSP3N80A MOSFET
Type Designator: SSP3N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm
Package: TO220
Ürün Bilgisi
SSP3N80A MOSFET
Type Designator: SSP3N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm
Package: TO220