STB24N60M2 TO-263 18A 600V 150W 190mΩ N-CHANNEL MOSFET
STB24N60M2 MOSFET
Type Designator: STB24N60M2
Marking Code: 24N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: D2PAK
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STB24N60M2 MOSFET
Type Designator: STB24N60M2
Marking Code: 24N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: D2PAK