STB26NM60ND TO-263 21A 600V 190W 175mΩ N-CHANNEL MOSFET
STB26NM60ND MOSFET
Type Designator: STB26NM60ND
Marking Code: 26NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 54.6 nC
Rise Time (tr): 14.5 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.175 Ohm
Package: D2PAK
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STB26NM60ND MOSFET
Type Designator: STB26NM60ND
Marking Code: 26NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 54.6 nC
Rise Time (tr): 14.5 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.175 Ohm
Package: D2PAK