STD10NM60N TO-252 10A 600V 70W 0.55Ω N-CHANNEL MOSFET
STD10NM60N MOSFET
Type Designator: STD10NM60N
Marking Code: 10NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 70 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 44 pF
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: DPAK
Ürün Bilgisi
STD10NM60N MOSFET
Type Designator: STD10NM60N
Marking Code: 10NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 70 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 44 pF
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm
Package: DPAK