TGAN60N60F2DS TO-3P 120A 600V 357W IGBT TRANSISTOR
TGAN60N60F2DS IGBT
Type Designator: TGAN60N60F2DS
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 357
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 120
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 46
Collector Capacity (Cc), typ, pF: 160
Total Gate Charge (Qg), typ, nC: 150
Package: TO3PN
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TGAN60N60F2DS IGBT
Type Designator: TGAN60N60F2DS
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 357
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 120
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 46
Collector Capacity (Cc), typ, pF: 160
Total Gate Charge (Qg), typ, nC: 150
Package: TO3PN