STH15NA50FI - (H15NA50FI) TO-3PF 9.3A 500V 80W 0.4Ω N-CHANNEL MOSFET
STH15NA50FI MOSFET
Type Designator: STH15NA50FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V
Maximum Drain Current |Id|: 9.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 37 nS
Drain-Source Capacitance (Cd): 345 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: ISOWATT218
Ürün Bilgisi
STH15NA50FI MOSFET
Type Designator: STH15NA50FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V
Maximum Drain Current |Id|: 9.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 37 nS
Drain-Source Capacitance (Cd): 345 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: ISOWATT218