STP12NM50 TO-220 12A 500V 160W 350mΩ N-CHANNEL MOSFET
STP12NM50
Type Designator: STP12NM50
Marking Code: P12NM50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: TO220
Ürün Bilgisi
STP12NM50
Type Designator: STP12NM50
Marking Code: P12NM50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: TO220