STP4NA80 TO-220 4A 800V 110W 3Ω N-CHANNEL MOSFET
STP4NA80 MOSFET
Type Designator: STP4NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 6 Ohm
Package: TO220
Ürün Bilgisi
STP4NA80 MOSFET
Type Designator: STP4NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.75 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 6 Ohm
Package: TO220