STW11NB80 - (W11NB80) TO-247 11A 800V 190W 0.8Ω N-CHANNEL MOSFET
STW11NB80 MOSFET
Type Designator: STW11NB80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO-247
Ürün Bilgisi
STW11NB80 MOSFET
Type Designator: STW11NB80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO-247