STW11NK100Z TO-247 8.3A 1000V 1.1Ω N-CHANNEL MOSFET
STW11NK100Z MOSFET
Type Designator: STW11NK100Z
Marking Code: W11NK100Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 8.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 113 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 1.38 Ohm
Package: TO247
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STW11NK100Z MOSFET
Type Designator: STW11NK100Z
Marking Code: W11NK100Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 8.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 113 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 1.38 Ohm
Package: TO247