STW60N10 TO-247 60A 100V 200W 0.05Ω N-CHANNEL MOSFET
STW60N10 MOSFET
Type Designator: STW60N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 270 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: TO247
Ürün Bilgisi
STW60N10 MOSFET
Type Designator: STW60N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 270 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: TO247