IPB123N10N3G TO-263 58A 100V 94W N-CHANNEL MOSFET
IPB123N10N3G
Type Designator: IPB123N10N3G
Marking Code: 123N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 58 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0123 Ohm
Package: TO263
Ürün Bilgisi
IPB123N10N3G
Type Designator: IPB123N10N3G
Marking Code: 123N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 58 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0123 Ohm
Package: TO263