SUD19P06-60-E3 TO252 MOSFET
₺64,90 + KDV
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Product Attributes
|
TYPE
|
DESCRIPTION
|
SELECT
|
|---|---|---|
|
Category
|
|
|
|
Mfr
|
Vishay Siliconix
|
|
|
Series
|
|
|
|
Pac
|
|
|
|
Part Status
|
Active
|
|
|
FET Type
|
P-Channel
|
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
18.3A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
|
|
Rds On (Max) @ Id, Vgs
|
60mOhm @ 10A, 10V
|
|
|
Vgs(th) (Max) @ Id
|
3V @ 250µA
|
|
|
Vgs (Max)
|
±20V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
2.3W (Ta), 38.5W (Tc)
|
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Supplier Device Package
|
TO-252AA
|
|
|
Package / Case
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
|
|
Drain to Source Voltage (Vdss)
|
60 V
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
40 nC @ 10 V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1710 pF @ 25 V
|
|
|
Base Product Number
|
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Product Attributes
|
TYPE
|
DESCRIPTION
|
SELECT
|
|---|---|---|
|
Category
|
|
|
|
Mfr
|
Vishay Siliconix
|
|
|
Series
|
|
|
|
Pac
|
|
|
|
Part Status
|
Active
|
|
|
FET Type
|
P-Channel
|
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
18.3A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
|
|
Rds On (Max) @ Id, Vgs
|
60mOhm @ 10A, 10V
|
|
|
Vgs(th) (Max) @ Id
|
3V @ 250µA
|
|
|
Vgs (Max)
|
±20V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
2.3W (Ta), 38.5W (Tc)
|
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
|
Mounting Type
|
Surface Mount
|
|
|
Supplier Device Package
|
TO-252AA
|
|
|
Package / Case
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
|
|
Drain to Source Voltage (Vdss)
|
60 V
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
40 nC @ 10 V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1710 pF @ 25 V
|
|
|
Base Product Number
|
SUD19P06-60-E3 TO252 MOSFET
₺65 + KDV