IXTQ200N10T TO-3P 200A 100V 550W 0.0055OHM N-CHANNEL MOSFET
IXTQ200N10T MOSFET
Type Designator: IXTQ200N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 550 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 152 nC
Rise Time (tr): 76 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: TO3P
Ürün Bilgisi
IXTQ200N10T MOSFET
Type Designator: IXTQ200N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 550 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 152 nC
Rise Time (tr): 76 nS
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: TO3P