RU6888R MOSFET

Type Designator: RU6888R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 68 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 88 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 65 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 340 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220